Scientific Articles
Vol. 26 No. 2 (2016)
https://doi.org/10.4081/microscopie.2016.6310

Ageing of GeTe nanowires

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Received: 27 September 2016
Published: 27 September 2016
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TEM, Phase change memory, nanowires, ageing

Authors

E. Rotunno
enzo.rotunno@imem.cnr.it
IMEM-CNR Parma, Italy.
M. Longo
IMM-CNR, Lab. MDM, Agrate Brianza (MB), Italy.
L. Lazzarini
IMEM-CNR Parma, Italy.
In this paper we report a TEM study on the ageing of GeTe nanowires, for scaled phase memory devices application, when exposed to normal atmospheric conditions. Selective oxidation of Ge occurs, leading to the formation of a Ge oxide amorphous shell around the wire, with GeTe4 nanocrystals embedded within. The oxidation process takes place in a few weeks after the sample preparation, seriously endangering the device integrity and correct functioning.

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Ageing of GeTe nanowires. (2016). Microscopie, 26(2), 58-63. https://doi.org/10.4081/microscopie.2016.6310

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